IGW25T120 Infineon Technologies, IGW25T120 Datasheet - Page 5

• Manufacturer Part Number: IGW25T120
• Description: IGBT 1200V 50A 190W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW25T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 190W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
70A
60A
50A
40A
30A
20A
10A
70A
60A
50A
40A
30A
20A
10A
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
0A
0A
0V
0V
V
GE
V
=17V
CE
11V
13V
15V
1V
2V
9V
7V
V
,
(T
(V
GE
COLLECTOR
j
CE
= 25°C)
,
T
GATE-EMITTER VOLTAGE
=20V)
2V
J
4V
=150°C
25°C
3V
6V
-
EMITTER VOLTAGE
4V
8V
5V
10V
6V
12V
TrenchStop
5
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
®
70A
60A
50A
40A
30A
20A
10A
3,0V
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
0A
Series
-50°C
0V
V
V
GE
CE
=17V
(T
saturation voltage as a function of
junction temperature
(V
,
T
11V
15V
13V
1V
COLLECTOR
J
9V
7V
j
GE
,
= 150°C)
JUNCTION TEMPERATURE
= 15V)
0°C
2V
-
3V
EMITTER VOLTAGE
IGW25T120
50°C
4V
Rev. 2.4
5V
100°C
I
I
I
I
C
C
C
C
6V
=8A
=15A
=50A
=25A
Nov. 09