IGW25T120 Infineon Technologies, IGW25T120 Datasheet - Page 11

• Manufacturer Part Number: IGW25T120
• Description: IGBT 1200V 50A 190W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW25T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 190W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure A. Definition of switching times
Figure B. Definition of switching losses
TrenchStop
11
®
Series
p(t)
T (t)
j
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
and Stray capacity C
τ
r
1
1
r
1
IGW25T120
τ
r
2
2
r
2
Rev. 2.4
σ
σ
=180nH
=39pF.
τ
r
n
n
r
n
Nov. 09
T
C