NDS352AP Fairchild Semiconductor, NDS352AP Datasheet

MOSFET P-CH 30V 900MA SSOT3

NDS352AP

Manufacturer Part Number
NDS352AP
Description
MOSFET P-CH 30V 900MA SSOT3
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS352AP

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
900mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
3nC @ 4.5V
Input Capacitance (ciss) @ Vds
135pF @ 15V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS352APTR

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Absolute Maximum Ratings
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1997 Fairchild Semiconductor Corporation
General Description
D
These P -Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications
such as notebook computer power management, portable
electronics, and other battery powered circuits where fast
high-side switching, and low in-line power loss are needed in a
very small outline surface mount package.
________________________________________________________________________________
NDS352AP
P-Channel Logic Level Enhancement Mode Field Effect Transistor
J
DSS
GSS
D
,T
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
Features
-0.9 A, -30 V. R
Industry standard outline SOT-23 surface mount package
using proprietary SuperSOT
and electrical capabilities.
High density cell design for extremely low R
Exceptional on-resistance and maximum DC current
capability.
R
NDS352AP
-55 to 150
DS(ON)
DS(ON)
G
0.46
250
±20
±0.9
±10
-30
0.5
75
= 0.3
= 0.5
D
TM
@ V
@ V
-3 design for superior thermal
GS
GS
S
= -10 V.
= -4.5 V
February 1997
DS(ON)
.
NDS352AP Rev.D
Units
°C/W
°C/W
W
°C
V
V
A

Related parts for NDS352AP

NDS352AP Summary of contents

Page 1

... Exceptional on-resistance and maximum DC current capability 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) February 1997 = 0 -4.5 V DS(ON 0 -10 V. DS(ON design for superior thermal . DS(ON NDS352AP Units -30 V ±20 V ±0.9 A ±10 0.5 W 0.46 -55 to 150 °C 250 °C/W 75 °C/W NDS352AP Rev.D ...

Page 2

... Conditions -250 µ - =125° - -250 µ =125° -4 -0 =125° - - 1.0 MHz -4 GEN GEN Min Typ Max Units - µA -10 µA 100 nA -100 nA -0.8 -1.7 -2.5 V -0.5 -1.4 -2.2 0.45 0.5 0.65 0.7 0.25 0 1.9 S 135 0 NDS352AP Rev.D ...

Page 3

... C/W when mounted on a 0.02 in pad of 2oz copper 270 C/W when mounted on a 0.001 in pad of 2oz copper Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -0.42 (Note Min Typ Max Units -0.42 A -10 A -0.8 -1 guaranteed by JC NDS352AP Rev.D ...

Page 4

... Figure 4. On-Resistance Variation with Drain Current and Temperature 1 1 0.9 0.8 0.7 -50 - Figure 6. Gate Threshold Variation -4.0 -4.5 -5.0 -5.5 -6.0 -7.0 - DRAIN CURRENT ( 25°C -55° -4. DRAIN CURRENT ( 100 125 150 T , JUNCTION TEMPERATURE (°C) . with Temperature NDS352AP Rev.C ...

Page 5

... Figure 10. Gate Charge Characteristics d(on OUT V OUT DUT Figure 12. Switching Waveforms T = 125°C J 25°C -55°C 0.4 0.6 0.8 1 1.2 1.4 , BODY DIODE FORWARD VOLTAGE (V) SD Source Current and Temperature V = -5V - GATE CHARGE (nC off d(off INVERTED PULSE WIDTH . NDS352Ap Rev ...

Page 6

... Current versus Copper Mounting Pad Area 0.01 0 TIME (sec -4.5V GS SINGLE PULSE = See Note 25° 0 DRAIN-SOURCE VOLTAGE (V) DS 4.5"x5" FR-4 Board Still Air V = -4.5V GS 0.1 0.2 0.3 2 2oz COPPER MOUNTING PAD AREA ( ( See Note 1b JA P(pk ( Duty Cycle 100 50 o 0.4 . 300 NDS352Ap Rev.C ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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