NDS352AP Fairchild Semiconductor, NDS352AP Datasheet - Page 4

• Manufacturer Part Number: NDS352AP
• Description: MOSFET P-CH 30V 900MA SSOT3
• Manufacturer: Fairchild Semiconductor

Specifications of NDS352AP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 135pF @ 15V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS352APTR

Typical Electrical Characteristics
-5
-4
-3
-2
-1
0
1.6
1.4
1.2
0.8
0.6
-3.2
-2.4
-1.6
-0.8
0
1
-4
-50
-1
V
Figure 1. On-Region Characteristics
GS
V
V
I
DS
Figure 5. Transfer Characteristics.
D
= -10V
GS
= -0.9A
-25
Figure 3. On-Resistance Variation
= -10V
= -4.5V
-1
V
-2
DS
V
-7.0
0
T , JUNCTION TEMPERATURE (°C)
GS
J
, DRAIN-SOURCE VOLTAGE (V)
with Temperature.
, GATE TO SOURCE VOLTAGE (V)
-6.0
-2
2 5
-5.5
-3
-5.0
5 0
-4.5
T
J
-3
= -55°C
-4
7 5
-4.0
1 0 0
-3.5
2 5
-4
1 2 5
-5
-3.0
.
1 2 5
-5
1 5 0
-6
1.6
1.4
1.2
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.8
0.6
0.4
1.2
1.1
0.9
0.8
0.7
1
1
1
-50
0
0
V
GS
with Drain Current and Gate Voltage
= -3.5 V
with Drain Current and Temperature
T = 125°C
Figure 2. On-Resistance Variation
-25
Figure 6. Gate Threshold Variation
J
Figure 4. On-Resistance Variation
-1
-1
T , JUNCTION TEMPERATURE (°C)
0
-4.0
I
with Temperature
I
D
D
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
25
-4.5
-2
25°C
-2
-5.0
50
-3
-55°C
-5.5
75
-6.0
.
-3
100
V
-4
GS
-7.0
= -4.5V
125
-10
.
.
NDS352AP Rev.C
-4
150
-5