NDS352AP Fairchild Semiconductor, NDS352AP Datasheet - Page 5

• Manufacturer Part Number: NDS352AP
• Description: MOSFET P-CH 30V 900MA SSOT3
• Manufacturer: Fairchild Semiconductor

Specifications of NDS352AP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 135pF @ 15V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS352APTR

Typical Electrical Characteristics
V
GS
4 0 0
3 0 0
2 0 0
1 0 0
5 0
3 0
2 0
0 .1
Figure 9. Capacitance Characteristics
Figure 7. Breakdown Voltage Variation with
1.08
1.06
1.04
1.02
0.98
0.96
0.94
1.1
Figure 11. Switching Test Circuit
1
-50
f = 1 MHz
V
R
0 .2
GS
GEN
I
D
-25
= 0 V
= -250µA
-V
DS
0 .5
T
0
, DRAIN TO SOURCE VOLTAGE (V)
V
J
Temperature
, JUNCTION TEMPERATURE (°C)
IN
G
2 5
1
5 0
2
D
S
V
DD
.
7 5
R
L
5
DUT
1 0 0
.
(continued)
1 0
.
C iss
C oss
C rss
1 2 5
V
2 0
OUT
1 5 0
3 0
V
t
V
OUT
d(on)
0.0001
IN
Figure 8. Body Diode Forward Voltage Variation with
0.001
0.01
1 0 %
0.1
Figure 10. Gate Charge Characteristics
4
1
10
0
8
6
4
2
0
0
Figure 12. Switching Waveforms
V
I
D
GS
= -0.9A
= 0V
0.2
t
5 0 %
-V
o n
1 0 %
SD
, BODY DIODE FORWARD VOLTAGE (V)
1
0.4
t
9 0 %
PULSE WIDTH
Source Current and Temperature
T = 125°C
r
J
Q
0.6
g
, GATE CHARGE (nC)
25°C
2
t
d(off)
0.8
-55°C
V
DS
5 0 %
1
3
= -5V
9 0 %
.
t
1.2
1 0 %
off
9 0 %
-10
-15
.
4
INVERTED
1.4
NDS352Ap Rev.C
t
f
.
5