NDS352AP Fairchild Semiconductor, NDS352AP Datasheet - Page 3

• Manufacturer Part Number: NDS352AP
• Description: MOSFET P-CH 30V 900MA SSOT3
• Manufacturer: Fairchild Semiconductor

Specifications of NDS352AP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 135pF @ 15V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS352APTR

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
I
V
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
S
SM
1. R
Notes:
SD
Typical R
P
design while R
D
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
JA
a. 250
b. 270
Scale 1 : 1 on letter size paper
T
R
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
J
1 a
JA
Parameter
Maximum Continuous Source Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
T
CA
A
t
o
o
C/W when mounted on a 0.02 in
C/W when mounted on a 0.001 in
is determined by the user's board design.
R
JC
T
J
R
T
A
CA
t
I
1b
2
D
t
(T
R
2
2
pad of 2oz copper.
DS ON @T
A
pad of 2oz copper.
= 25°C unless otherwise noted)
J
Conditions
V
GS
= 0 V, I
S
= -0.42
(Note 2)
Min
Typ
-0.8
-0.42
JC
Max
-1.2
-10
is guaranteed by
NDS352AP Rev.D
Units
A
A
V