NDS352AP Fairchild Semiconductor, NDS352AP Datasheet - Page 6

• Manufacturer Part Number: NDS352AP
• Description: MOSFET P-CH 30V 900MA SSOT3
• Manufacturer: Fairchild Semiconductor

Specifications of NDS352AP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 135pF @ 15V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS352APTR

Typical Electrical Characteristics
Figure 13. Transconductance Variation with Drain
0.8
0.6
0.4
0.2
0.005
0.002
0.001
2.5
1.5
0.5
Steady-State Power Dissipation versus
Figue 15. SuperSOT
0.05
0.02
0.01
1
0
0.5
0.2
0.1
3
2
1
0
0.0001
0
0
1
1b
1b
V
1a
DS
= - 5V
D = 0.5
0.05
0.02
0.01
0.2
0.1
Copper Mounting Pad Area.
Single Pulse
2oz COPPER MOUNTING PAD AREA (in )
-1
0.1
Figure 17. Transient Thermal Response Curve.
Note : Characterization performed using the conditions described in note 1b. Transient thermal response will
Current and Temperature
I , DRAIN CURRENT (A)
D
0.001
change depending on the circuit board design.
-2
0.2
TM _
3 Maximum
-3
T = -55°C
J
125°C
0.01
25°C
0.3
4.5"x5" FR-4 Board
T = 25 C
Still Air
(continued)
A
2
2
.
-4
o
0.4
-5
0.1
t , TIME (sec)
1
Figure 14. Maximum Safe Operating Area.
0.05
0.01
0.5
0.1
20
10
1.2
1.1
0.9
0.8
0.7
0.6
5
2
1
0.1
1
0
1b
Current versus Copper Mounting Pad Area
Figure 16. Maximum Steady-State Drain
1a
0.2
R
A
SINGLE PULSE
JA
V
1
T
= See Note 1b
GS
A
2oz COPPER MOUNTING PAD AREA (in )
- V
= 25°C
= -4.5V
0.5
0.1
DS
, DRAIN-SOURCE VOLTAGE (V)
1
P(pk)
2
T - T
R
R
Duty Cycle, D = t /t
J
0.2
10
JA
JA
t
1
A
(t) = r(t) * R
= See Note 1b
t
= P * R
5
2
10
JA
0.3
1
4.5"x5" FR-4 Board
T = 25 C
Still Air
V
(t)
JA
A
GS
2
2
20 30
= -4.5V
100
o
NDS352Ap Rev.C
.
50
0.4
300