IPP147N03L G Infineon Technologies, IPP147N03L G Datasheet

IPP147N03L G

Manufacturer Part Number

IPP147N03L G

Description

MOSFET N-CH 30V 20A TO-220-3

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Datasheet

1.IPP147N03L_G.pdf (10 pages)

Specifications of IPP147N03L G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

14.7 mOhm @ 20A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

20A

Vgs(th) (max) @ Id

2.2V @ 250µA

Gate Charge (qg) @ Vgs

10nC @ 10V

Input Capacitance (ciss) @ Vds

1000pF @ 15V

Power - Max

31W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Transistor Polarity

N Channel

Drain Source Voltage Vds

30V

On Resistance Rds(on)

12.3mohm

Rds(on) Test Voltage Vgs

10V

Voltage Vgs Max

20V

Operating Temperature Range

-55Â°C To +175Â°C

Transistor Case Style

TO-220

Rohs Compliant

Yes

Configuration

Single

Resistance Drain-source Rds (on)

0.0147 Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

20 A

Power Dissipation

31 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

IPP147N03LGIN
IPP147N03LGXK
SP000266315

Current page: 1 of 10
Download datasheet (376Kb)

Rev. 1.02

Type

Features

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC

• N-channel, logic level

• Excellent gate charge x R

• Very low on-resistance R

• Avalanche rated

• Pb-free plating; RoHS compliant

Maximum ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche current, single pulse

Avalanche energy, single pulse

Reverse diode dv /dt

Gate source voltage

OptiMOS

Type

Package

Marking

J-STD20 and JESD22

3 Power-Transistor

IPP147N03L G

PG-TO220-3

147N03L

=25 °C, unless otherwise specified

DS(on)

product (FOM)

for target applications

Symbol Conditions

dv /dt

D,pulse

IPB147N03L G

PG-TO263-3

147N03L

di /dt =200 A/μs,

page 1

j,max

=10 A, R

=20 A, V

=100 °C

=25 °C

=10 V, T

=4.5 V, T

=4.5 V,

=175 °C

=24 V,

=25

Product Summary

=25 °C

=100 °C

=25 °C

DS(on),max

Value

140

±20

IPB147N03L G

IPP147N03L G

14.7

Unit

kV/μs

2007-08-29

Related parts for IPP147N03L G

IPP147N03L G Summary of contents

Page 1

... DS(on) DS(on) IPB147N03L G PG-TO263-3 147N03L Symbol Conditions =100 ° =25 °C D,pulse =25 ° = = /dt di /dt =200 A/μs, T =175 °C j,max V GS page 1 IPP147N03L G IPB147N03L G Product Summary DS(on),max I D Value =25 ° =100 ° =25 ° 140 20 = ± 14 Unit A mJ kV/μs V 2007-08-29 ...

Page 2

... (BR)DSS =250 μA GS(th = DSS T =25 ° = =125 ° = GSS =4 =20 A DS( |>2 DS(on)max page 2 IPP147N03L G IPB147N03L G Value 31 -55 ... 175 55/175/56 Values min. typ. max 4 2 100 - 10 100 - 17.4 21.7 - 12.3 14 Unit W °C Unit K/W V μ 2007-08-29 ...

Page 3

... MHz C rss t d( d(off g( plateau g(sync 4 = oss =25 ° S,pulse = =25 ° = /dt =400 A/μs F page 3 IPP147N03L G IPB147N03L G Values min. typ. max. - 770 1000 = 350 470 - 16 - 3.1 - 2.4 = 2.0 - 2.7 - 1.2 - 1.2 = 2.7 - 4.8 - 3 140 - 0.95 1 Unit 2007-08-29 ...

Page 4

... Rev. 1.02 2 Drain current I =f(T D 100 150 200 T [° Max. transient thermal impedance Z =f(t thJC parameter μs 10 μs 100 μ 0 0. [V] DS page 4 IPP147N03L G IPB147N03L 100 T [° 0.5 0.2 1 0.1 0.05 0.02 0.01 single pulse [s] p 150 ...

Page 5

... Typ. output characteristics =f(V =25 ° parameter Typ. transfer characteristics I =f |>2 DS(on)max parameter Rev. 1.02 6 Typ. drain-source on resistance R DS(on) parameter 4 3 Typ. forward transconductance g =f(I fs 175 °C 25 ° [V] GS page 5 IPP147N03L G IPB147N03L =f(I =25 ° 3 =25 ° [ 11 100 80 100 2007-08-29 ...

Page 6

... Rev. 1.02 10 Typ. gate threshold voltage V =10 V GS(th) 2.5 1.5 typ 0.5 60 100 140 180 T [° Forward characteristics of reverse diode I =f(V F parameter: T 1000 Ciss Coss Crss [V] DS page 6 IPP147N03L G IPB147N03L =f(T =V =250 μ -60 - 100 T [° 100 25 °C, 98% 175 ° 0.0 0.5 1 ...

Page 7

... R =f(t = parameter: T j(start) 100 10 150 ° Drain-source breakdown voltage =f BR(DSS -60 -20 20 Rev. 1.02 14 Typ. gate charge V =f(Q GS parameter °C 100 ° [μ Gate charge waveforms 60 100 140 180 T [°C] j page 7 IPP147N03L G IPB147N03L =20 A pulsed gate [nC] gate s(th g(th ate 2007-08-29 ...

Page 8

... Package Outline Rev. 1.02 PG-TO220-3 page 8 IPP147N03L G IPB147N03L G 2007-08-29 ...

Page 9

... Package Outline Rev. 1.02 PG-TO263-3 page 9 IPP147N03L G IPB147N03L G 2007-08-29 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.02 page 10 IPP147N03L G IPB147N03L G 2007-08-29 ...

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