IPP147N03L G Infineon Technologies, IPP147N03L G Datasheet - Page 5

MOSFET N-CH 30V 20A TO-220-3

IPP147N03L G

Manufacturer Part Number
IPP147N03L G
Description
MOSFET N-CH 30V 20A TO-220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP147N03L G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14.7 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 15V
Power - Max
31W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
12.3mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-220
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0147 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
31 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPP147N03LGIN
IPP147N03LGXK
SP000266315
Rev. 1.02
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
80
60
40
20
90
80
70
60
50
40
30
20
10
DS
GS
0
0
0
0
); T
); |V
j
=25 °C
DS
j
GS
|>2|I
1
10 V
D
|R
1
DS(on)max
2
175 °C
V
V
GS
DS
5 V
[V]
[V]
3
25 °C
2
2.8 V
4
4.5 V
3.5 V
3.2 V
3 V
4 V
page 5
3
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
32
28
24
20
16
12
80
60
40
20
D
=f(I
8
4
0
0
); T
0
0
D
j
); T
=25 °C
GS
3.5 V
j
=25 °C
20
20
4 V
40
40
I
I
D
D
[A]
[A]
60
60
4.5 V
IPB147N03L G
IPP147N03L G
10 V
11.5 V
80
80
5 V
2007-08-29
100
100

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