IPP147N03L G Infineon Technologies, IPP147N03L G Datasheet - Page 6

• Manufacturer Part Number: IPP147N03L G
• Description: MOSFET N-CH 30V 20A TO-220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP147N03L G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.7 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 15V
• Power - Max: 31W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 12.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0147 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPP147N03LGIN; IPP147N03LGXK; SP000266315

Rev. 1.02
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
28
24
20
16
12
=f(T
DS
8
4
0
4
3
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=20 A; V
98 %
20
10
GS
=10 V
T
V
j
DS
60
Coss
[°C]
typ
Ciss
[V]
Crss
100
20
140
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
2.5
1.5
0.5
100
=f(T
SD
2
1
0
10
-60
1
)
0.0
j
); V
j
-20
GS
175 °C
=V
0.5
DS
20
; I
D
=250 μA
T
V
j
SD
60
1.0
[°C]
[V]
25 °C, 98%
100
IPB147N03L G
IPP147N03L G
1.5
25 °C
175 °C, 98%
140
2007-08-29
180
2.0