IPP147N03L G Infineon Technologies, IPP147N03L G Datasheet - Page 7

• Manufacturer Part Number: IPP147N03L G
• Description: MOSFET N-CH 30V 20A TO-220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP147N03L G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.7 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 15V
• Power - Max: 31W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 12.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0147 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPP147N03LGIN; IPP147N03LGXK; SP000266315

Rev. 1.02
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
34
32
30
28
26
24
22
20
AV
1
10
-60
=f(T
); R
-1
j
GS
); I
j(start)
=25
-20
D
=1 mA
10
0
150 °C
20
t
T
AV
100 °C
j
10
60
[°C]
[μs]
1
100
25 °C
10
2
140
180
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=20 A pulsed
g s
Q
Q
gate
g
Q
6
sw
[nC]
Q
g d
IPB147N03L G
IPP147N03L G
6 V
15 V
Q
24 V
g ate
2007-08-29
12