IPP147N03L G Infineon Technologies, IPP147N03L G Datasheet - Page 3

• Manufacturer Part Number: IPP147N03L G
• Description: MOSFET N-CH 30V 20A TO-220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP147N03L G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.7 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 15V
• Power - Max: 31W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 12.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0147 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPP147N03LGIN; IPP147N03LGXK; SP000266315

Rev. 1.02
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
See figure 16 for gate charge parameter definition
5)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
Q
Q
I
I
V
Q
d(on)
r
d(off)
f
S
S,pulse
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
g
g(sync)
oss
rr
V
f =1 MHz
V
I
V
V
V
V
V
V
V
T
V
T
V
di
D
page 3
C
j
GS
DD
DD
GS
DD
GS
DS
GS
DD
GS
R
=20 A, R
=25 °C
F
=25 °C
=15 V, I
/dt =400 A/μs
=0.1 V,
=0 V, V
=15 V, V
=15 V, I
=0 to 4.5 V
=15 V, I
=0 to 10 V
=0 to 4.5 V
=15 V, V
=0 V, I
F
F
G
DS
=20 A,
=I
D
D
=1.6
GS
GS
=20 A,
=20 A,
=15 V,
S
=10 V,
=0 V
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.95
typ.
770
350
3.1
2.4
2.0
2.7
1.2
1.2
2.7
4.8
3.5
4.2
9.0
16
12
10
-
-
-
IPB147N03L G
IPP147N03L G
max.
1000
470
140
1.2
20
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
ns
nC
V
nC
A
V
nC
2007-08-29