FDMA510PZ Fairchild Semiconductor, FDMA510PZ Datasheet

MOSFET P-CH 20V 7.8A 6-MICROFET

FDMA510PZ

Manufacturer Part Number
FDMA510PZ
Description
MOSFET P-CH 20V 7.8A 6-MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet

Specifications of FDMA510PZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 7.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7.8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 4.5V
Input Capacitance (ciss) @ Vds
1480pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.03 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
7.8 A
Power Dissipation
2400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.03Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
MicroFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA510PZTR
©2009 Fairchild Semiconductor Corporation
FDMA510PZ Rev.B2
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMA510PZ
Single P-Channel PowerTrench
–20V, –7.8A, 30m
Features
V
V
I
P
T
R
R
D
J
DS
GS
D
Max r
Max r
Max r
Max r
Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
HBM ESD protection level > 3KV typical (Note 3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
, T
JA
JA
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
510
Drain
= 30m at V
= 37m at V
= 50m at V
= 90m at V
Pin 1
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
MicroFET 2X2 (Bottom View)
D
GS
GS
GS
GS
= –4.5V, I
= –2.5V, I
= –1.8V, I
= –1.5V, I
D
D
FDMA510PZ
-Continuous
-Pulsed
Device
D
S
D
D
D
D
= –7.8A
= –6.6A
= –5.5A
= –2.0A
G
T
A
= 25°C unless otherwise noted
Parameter
Source
MicroFET 2X2
Package
®
MOSFET
1
General Description
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
G
D
D
Reel Size
1
2
3
7’’
Bottom Drain Contact
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Tape Width
8mm
–55 to +150
Ratings
–7.8
–20
145
–24
2.4
0.9
±8
52
6
5
4
April 2009
D
D
S
www.fairchildsemi.com
3000units
Quantity
Units
°C/W
°C
W
V
V
A
tm

Related parts for FDMA510PZ

FDMA510PZ Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient JA Package Marking and Ordering Information Device Marking Device 510 FDMA510PZ ©2009 Fairchild Semiconductor Corporation FDMA510PZ Rev.B2 ® MOSFET General Description = –7.8A This device is designed specifically for battery charge or load D switching in cellular handset and other ultraportable applications. = –6. features a MOSFET with low on-state resistance ...

Page 2

... Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDMA510PZ Rev. 25°C unless otherwise noted J Test Conditions I = – ...

Page 3

... Figure 3. Normalized On- Resistance vs Junction Temperature 24 PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX - - 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMA510PZ Rev. 25°C unless otherwise noted -1. -2. -1. 100 125 150 0. 150 C J 1E-3 1.5 2.0 2 ...

Page 4

... T = 125 - GATE TO SOURCE VOLTAGE ( Figure 9. Gate Leakage Current vs Gate to Source Voltage 400 100 Figure 11. Single Pulse Maximum Power Dissipation ©2009 Fairchild Semiconductor Corporation FDMA510PZ Rev. 25°C unless otherwise noted - - 0. PULSE WIDTH (s) 4 3000 C 1000 1MHz 100 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 8 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ©2009 Fairchild Semiconductor Corporation FDMA510PZ Rev. 25°C unless otherwise noted 145 C RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK www.fairchildsemi.com 3 10 ...

Page 6

... Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMA510PZ Rev.B2 6 www.fairchildsemi.com ...

Page 7

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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