AOB482L Alpha & Omega Semiconductor Inc, AOB482L Datasheet

MOSFET N-CH 80V D2PAK

AOB482L

Manufacturer Part Number
AOB482L
Description
MOSFET N-CH 80V D2PAK
Manufacturer
Alpha & Omega Semiconductor Inc
Series
SDMOS™r
Datasheet
1.AOB482L.pdf (7 pages)

Specifications of AOB482L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.9 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
105A
Vgs(th) (max) @ Id
3.7V @ 250µA
Gate Charge (qg) @ Vgs
81nC @ 10V
Input Capacitance (ciss) @ Vds
4870pF @ 40V
Power - Max
333W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1214-2
AOB482
Pev 0: May 2010
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
General Description
The AOT482L/AOB482L is fabricated with SDMOS
trench technology that combines excellent R
gate charge and low Q
efficiency with controlled switching behavior. This
universal technology is well suited for PWM, load
switching and general purpose applications.
D
G
Top View
B
A
Parameter
C
C
T
T
T
T
T
T
T
T
TO220
G
C
C
A
A
C
C
A
A
rr
=25°C
=100°C
=25°C
=70°C
=25°C
=100°C
=25°C
=70°C
.The result is outstanding
D
S
C
Bottom View
A
A D
A
D
=25°C unless otherwise noted
t ≤ 10s
Steady-State
Steady-State
DS(ON)
Symbol
V
V
I
I
I
I
E
P
P
T
Symbol
D
DM
DSM
AS
J
DS
GS
AS
D
DSM
, T
www.aosmd.com
with low
, I
S
R
R
TM
, E
AR
STG
θJC
θJA
D
AR
G
Product Summary
V
I
R
R
100% UIS Tested
100% R
D
DS
DS(ON)
DS(ON)
D
Top View
(at V
0.36
Typ
11
47
(at V
GS
(at V
g
G
=10V)
Tested
GS
GS
Maximum
-55 to 175
S
AOT482L/AOB482L
=10V)
TO-263
D
= 7V)
2
±25
105
330
336
333
167
2.1
1.3
PAK
80
82
11
82
9
80V N-Channel MOSFET
D
Bottom View
Max
0.45
15
60
S
G
80V
105A
< 7.2mΩ
< 9mΩ
SDMOS
G
Units
Units
°C/W
°C/W
°C/W
mJ
°C
W
W
V
V
A
A
A
Page 1 of 7
D
S
TM

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AOB482L Summary of contents

Page 1

... General Description The AOT482L/AOB482L is fabricated with SDMOS trench technology that combines excellent R gate charge and low Q .The result is outstanding rr efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. TO220 Top View Bottom View ...

Page 2

... Ratings are based on low frequency and duty cycles to keep initial J(MAX) and case to ambient. θJC =175°C. The SOA curve provides a single pulse rating. 2 FR-4 board with 2oz. Copper still air environment with T www.aosmd.com AOT482L/AOB482L Min Typ Max Units =55° ...

Page 3

... Figure 2: Transfer Characteristics (Note E) 2.4 2.2 2 1.8 1.6 1.4 =10V GS 1 1.0E+02 I =20A D 1.0E+01 40 125°C 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E- 0.0 www.aosmd.com AOT482L/AOB482L =5V 125°C 25° (Volts =10V GS I =20A = =20A 100 125 150 175 0 Temperature (°C) 18 Figure 4: On-Resistance vs. Junction Temperature (Note E) 125° ...

Page 4

... DC 10ms 2000 1000 0 10 100 1000 1E-05 0.0001 0.001 Figure 10: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 0.0001 0.001 0.01 Pulse Width (s) www.aosmd.com AOT482L/AOB482L C iss C oss C rss (Volts) DS Figure 8: Capacitance Characteristics T =175°C ...

Page 5

... Figure 13: Power De-rating (Note F) 1000 100 10 1 0.01 125 150 175 Figure 15: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 Single Pulse 1 10 Pulse Width (s) www.aosmd.com AOT482L/AOB482L 50 75 100 125 150 175 T (°C) CASE T =25° ...

Page 6

... Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 25º 25º 800 1000 0 Figure 20: Diode Reverse Recovery Time and www.aosmd.com AOT482L/AOB482L 125ºC 25ºC 25ºC 125º ( =20A s 125º 25ºC 25ºC S 125ºC 200 400 600 800 1000 di/dt (A/µs) Softness Factor vs ...

Page 7

... Vds + DUT Vdd VDC - Vgs t d(on) Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds + Vgs Vdd VDC Id - Vgs Diode Recovery Test Circuit & Waveforms Vgs Isd + Vdd VDC - Vds www.aosmd.com AOT482L/AOB482L Qg Qgs Qgd Charge 90% 10 d(off off DSS Idt ...

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