AOB482L Alpha & Omega Semiconductor Inc, AOB482L Datasheet - Page 5

• Manufacturer Part Number: AOB482L
• Description: MOSFET N-CH 80V D2PAK
• Manufacturer: Alpha & Omega Semiconductor Inc
• Series: SDMOS™r

Specifications of AOB482L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.9 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 105A
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Input Capacitance (ciss) @ Vds: 4870pF @ 40V
• Power - Max: 333W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1214-2; AOB482

Rev 0: May 2010
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
0.001
1000
80
60
40
20
0.01
100
0
0.1
10
10
1
1
0
0.01
1
Figure 12: Single Pulse Avalanche capability
D=T
T
R
T
J,PK
θJA
A
25
Figure 14: Current De-rating (Note F)
T
=150°C
A
on
=60°C/W
=T
=25°C
/T
A
+P
50
Time in avalanche, t
DM
.Z
10
θJA
75
T
.R
CASE
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
(Note C)
θJA
0.1
(°C)
100
100
T
A
125
Single Pulse
A
T
(µs)
=100°C
A
=125°C
150
www.aosmd.com
1
175
1000
Pulse Width (s)
1000
350
300
250
200
150
100
100
50
10
0
1
0.01
0
40
Figure 15: Single Pulse Power Rating Junction-to-
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
25
Figure 13: Power De-rating (Note F)
50
P
Ambient (Note H)
D
Pulse Width (s)
1
75
T
T
CASE
on
AOT482L/AOB482L
T
(°C)
100
100
T
125
A
=25°C
Page 5 of 7
17
10
100
18
5
2
0
150
175
1000