AOB482L Alpha & Omega Semiconductor Inc, AOB482L Datasheet - Page 4

• Manufacturer Part Number: AOB482L
• Description: MOSFET N-CH 80V D2PAK
• Manufacturer: Alpha & Omega Semiconductor Inc
• Series: SDMOS™r

Specifications of AOB482L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.9 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 105A
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Input Capacitance (ciss) @ Vds: 4870pF @ 40V
• Power - Max: 333W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1214-2; AOB482

Rev 0: May 2010
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000.0
8
6
4
2
0
0.001
100.0
0.01
10.0
0
0.1
1.0
0.1
0.0
0.000001
10
1
0.01
V
I
10
R
limited
Figure 9: Maximum Forward Biased Safe
D
D=T
T
R
DS
Figure 7: Gate-Charge Characteristics
=20A
DS(ON)
J,PK
θJC
=40V
on
=0.45°C/W
=T
/T
0.1
C
20
+P
Operating Area (Note F)
DM
0.00001
T
T
.Z
J(Max)
C
=25°C
θJC
30
Q
.R
=175°C
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1
V
g
Single Pulse
DS
θJC
(nC)
(Volts)
40
10
DC
0.0001
50
10µs
100
www.aosmd.com
60
10µs
100µs
1ms
10ms
0.001
1000
70
Pulse Width (s)
6000
5000
4000
3000
2000
1000
5000
4000
3000
2000
1000
0
1E-05 0.0001 0.001
0
40
0
0.01
Figure 10: Single Pulse Power Rating Junction-to-
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
Figure 8: Capacitance Characteristics
C
oss
20
P
0.1
D
C
30
Pulse Width (s)
rss
Case (Note F)
V
T
DS
on
C
AOT482L/AOB482L
(Volts)
0.01
iss
40
T
T
T
J(Max)
C
=25°C
50
0.1
=175°C
1
60
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17
10
18
5
2
0
1
70
80
10
10