AOB482L Alpha & Omega Semiconductor Inc, AOB482L Datasheet - Page 6

• Manufacturer Part Number: AOB482L
• Description: MOSFET N-CH 80V D2PAK
• Manufacturer: Alpha & Omega Semiconductor Inc
• Series: SDMOS™r

Specifications of AOB482L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.9 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 105A
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Input Capacitance (ciss) @ Vds: 4870pF @ 40V
• Power - Max: 333W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1214-2; AOB482

Rev 0: May 2010
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
240
200
160
120
250
200
150
100
80
40
50
0
0
Figure 17: Diode Reverse Recovery Charge and
Figure 19: Diode Reverse Recovery Charge and
0
0
Q
I
rm
di/dt=800A/µs
I
Q
I
rr
s
rm
Peak Current vs. Conduction Current
=20A
rr
5
200
Peak Current vs. di/dt
10
400
di/dt (A/µs)
I
S
15
(A)
600
125ºC
125ºC
25ºC
125ºC
125ºC
25ºC
20
25ºC
25ºC
800
25
www.aosmd.com
1000
30
50
45
40
35
30
25
20
15
10
5
0
50
40
30
20
10
0
50
40
30
20
10
35
30
25
20
15
10
5
0
0
0
0
Figure 18: Diode Reverse Recovery Time and
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
t
di/dt=800A/µs
rr
S
5
200
Softness Factor vs. di/dt
10
25ºC
125ºC
400
di/dt (A/µs)
I
S
15
(A)
25ºC
125ºC
600
AOT482L/AOB482L
25ºC
125º
125ºC
25ºC
20
800
I
s
25
=20A
t
rr
S
Page 6 of 7
1000
30
2.5
2
1.5
1
0.5
0
3
2.5
2
1.5
1
0.5
0