HUFA76619D3ST Fairchild Semiconductor, HUFA76619D3ST Datasheet - Page 2

• Manufacturer Part Number: HUFA76619D3ST
• Description: MOSFET N-CH 100V 18A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA76619D3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 767pF @ 25V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Source to Drain Diode Specifications
©2001 Fairchild Semiconductor Corporation
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (V
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
SWITCHING SPECIFICATIONS (V
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
PARAMETER
PARAMETER
T
GS
GS
C
= 25
= 4.5V)
= 10V)
SYMBOL
SYMBOL
o
V
r
Q
BV
t
t
Q
DS(ON)
C, Unless Otherwise Specified
t
t
d(OFF)
d(OFF)
C
C
GS(TH)
Q
R
R
I
I
d(ON)
t
d(ON)
t
g(TOT)
C
Q
Q
GSS
t
t
Q
V
DSS
OFF
OFF
g(TH)
OSS
ON
ON
RSS
g(5)
ISS
t
DSS
t
t
t
t
SD
RR
gs
gd
r
r
rr
JC
f
f
JA
I
I
V
V
V
V
I
I
I
TO-251AA, TO-252AA
V
V
(Figures 15, 21, 22)
V
V
R
(Figures 16, 21, 22)
V
V
V
V
f = 1MHz
(Figure 13)
I
I
I
I
D
D
D
D
D
SD
SD
SD
SD
DS
DS
GS
GS
DD
GS
DD
GS
GS
GS
GS
GS
DS
= 250 A, V
= 250 A, V
= 18A, V
= 12A, V
= 12A, V
=12A
= 6A
= 12A, dI
= 12A, dI
= 95V, V
= 90V, V
= 25V, V
= 16V
= V
= 50V, I
= 50V, I
= 0V to 10V
= 0V to 5V
= 0V to 1V
= 12
4.5V, R
10V,
DS
, I
GS
GS
GS
D
D
D
SD
SD
GS
GS
GS
GS
GS
GS
= 10V (Figures 9, 10)
= 5V (Figure 9)
= 4.5V (Figure 9
= 12A
= 18A
TEST CONDITIONS
= 250 A (Figure 11)
TEST CONDITIONS
/dt = 100A/ s
/dt = 100A/ s
= 0V
= 0V, T
= 0V,
= 0V , T
= 0V (Figure 12)
= 12
V
I
I
(Figures 14, 19, 20)
D
g(REF)
C
DD
C
= 12A,
= 150
= -40
= 30V,
= 1.0mA
o
o
C
C (Figure 12)
MIN
100
MIN
95
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HUFA76619D3, HUFA76619D3S Rev. B
0.065
0.072
0.074
TYP
0.74
767
138
TYP
2.2
6.7
10
82
32
42
30
50
52
24
13
20
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.085
0.087
0.089
MAX
MAX
0.89
1.25
250
100
137
111
153
101
333
2.0
1.0
100
53
29
16
1
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
UNITS
o
o
C/W
C/W
nA
nC
nC
nC
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
A
A