HUFA76619D3ST Fairchild Semiconductor, HUFA76619D3ST Datasheet - Page 3

• Manufacturer Part Number: HUFA76619D3ST
• Description: MOSFET N-CH 100V 18A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA76619D3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 767pF @ 25V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2002 Fairchild Semiconductor Corporation
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
200
100
10
0.01
0
0.1
0
10
2
1
10
-5
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
TEMPERATURE
25
T
C
50
, CASE TEMPERATURE (
V
V
GS
GS
10
SINGLE PULSE
10
= 5V
75
= 10V
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
100
125
o
C)
FIGURE 4. PEAK CURRENT CAPABILITY
10
10
-3
150
-3
t, RECTANGULAR PULSE DURATION (s)
175
t, PULSE WIDTH (s)
10
10
-2
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
20
15
10
5
0
25
CASE TEMPERATURE
V
50
GS
10
10
= 4.5V
-1
-1
NOTES:
DUTY FACTOR: D = t
PEAK T
T
75
C
, CASE TEMPERATURE (
J
= P
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
V
C
I = I
GS
100
DM
= 25
HUFA76619D3, HUFA76619D3S Rev. B
25
= 10V
x Z
o
C
10
10
o
JC
P
1
C DERATE PEAK
DM
0
/t
0
125
x R
2
175 - T
JC
150
o
t
C)
+ T
1
C
t
150
2
C
175
10
10
1
1