HUFA76619D3ST Fairchild Semiconductor, HUFA76619D3ST Datasheet - Page 5

• Manufacturer Part Number: HUFA76619D3ST
• Description: MOSFET N-CH 100V 18A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA76619D3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 767pF @ 25V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2002 Fairchild Semiconductor Corporation
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
2000
1000
100
200
120
10
160
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
80
40
1.2
0.9
0.6
0.3
0
0.1
-80
0
C
V
V
GS
OSS
GS
JUNCTION TEMPERATURE
R
= 4.5V, V
GS
-40
= 0V, f = 1MHz
V
, GATE TO SOURCE RESISTANCE ( )
C
10
DS
DS
T
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
+ C
DD
0
1.0
GD
= 50V, I
20
40
D
= 12A
80
30
V
GS
10
C
= V
ISS
(Continued)
120
C
RSS
DS
o
C
C)
, I
GS
40
D
t
C
160
d(OFF)
= 250 A
+ C
GD
t
r
t
d(ON)
GD
t
f
100
200
50
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
200
160
10
120
8
6
4
2
0
80
40
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
0
1.2
1.1
1.0
0.9
0
0
-80
V
DD
V
GS
I
D
= 50V
R
= 250 A
VOLTAGE vs JUNCTION TEMPERATURE
GATE CURRENT
= 10V, V
GS
-40
10
5
, GATE TO SOURCE RESISTANCE ( )
T
J
DD
, JUNCTION TEMPERATURE (
Q
0
= 50V, I
g
, GATE CHARGE (nC)
10
20
40
D
= 18A
HUFA76619D3, HUFA76619D3S Rev. B
80
WAVEFORMS IN
DESCENDING ORDER:
15
30
I
I
I
D
D
D
t
d(ON)
t
t
d(OFF)
= 18A
= 12A
= 6A
f
120
t
r
o
C)
40
20
160
200
50
25