72T7285L4-4BBG Integrated Device Technology (Idt), 72T7285L4-4BBG Datasheet - Page 9

• Manufacturer Part Number: 72T7285L4-4BBG
• Description: FIFO Mem Sync Dual Depth/Width Uni-Dir 16K x 72 324-Pin BGA
• Manufacturer: Integrated Device Technology (Idt)

Specifications of 72T7285L4-4BBG

• Package: 324BGA
• Configuration: Dual
• Bus Directional: Uni-Directional
• Density: 1.125 Mb
• Organization: 16Kx72
• Data Bus Width: 72 Bit
• Timing Type: Synchronous
• Expansion Type: Depth|Width
• Typical Operating Supply Voltage: 2.5 V
• Operating Temperature: 0 to 70 °C

RECOMMENDED DC OPERATING CONDITIONS
NOTES:
1. Both WCLK and RCLK toggling at 20MHz. Data inputs toggling at 10MHz. WCS = HIGH, REN or RCS = HIGH.
2. Typical I
3. Typical I
4. Total Power consumed: PT = (V
5. Outputs are not 3.3V tolerant.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
2. Compliant with JEDEC JESD8-5. V
NOTE:
1. V
2. Outputs are not 3.3V tolerant.
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(Commercial: V
16,384 x 72, 32,768 x 72, 65,536 x 72, 131,072 x 72
Symbol
V
V
T
I
GND
Symbol
I
I
V
V
I
I
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
OUT
LI
LO
CC1
CC2
V
REF
V
V
Symbol
TERM
STG
T
T
REF
OH
OL
CC
IH
IL
A
A
(1,2)
(1)
(5)
(1)
is only required for HSTL or eHSTL inputs. V
CC1
DDQ
calculation
calculation: With Data Outputs in High-Impedance: I
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Voltage Reference Input
Operating Temperature Commercial
Operating Temperature Industrial
CC
Input Leakage Current
Output Leakage Current
Output Logic “1” Voltage,
Output Logic “0” Voltage,
Active V
Standby V
Terminal Voltage
with respect to GND
Storage Temperature
DC Output Current
= 2.5V ± 0.125V, T
:
CC
Rating
for LVTTL I/O I
for HSTL or eHSTL I/O I
With Data Outputs in Low-Impedance: I
fs = WCLK frequency = RCLK frequency (in MHz), V
t
A
CC
Current (V
= 25°C, C
Current (V
CC
x I
Parameter
CC
CC
CC
L
terminal only.
) + V
= capacitive load (pf).
CC
CC1
A
⎯ LVTTL
⎯ eHSTL
⎯ HSTL
⎯ LVTTL
⎯ eHSTL
⎯ HSTL
⎯ eHSTL
⎯ HSTL
= 2.5V)
= 0°C to +70°C;Industrial: V
= 2.5V)
DDQ
(mA) = 2.24mA x fs, fs = WCLK frequency = RCLK frequency (in MHz)
Parameter
x I
REF
CC1
Commercial
–0.5 to +3.6
–55 to +125
–50 to +50
DDQ
(mA) = 55mA + (2.24mA x fs), fs = WCLK frequency = RCLK frequency (in MHz)
should be tied LOW for LVTTL operation.
I
I
I
I
I
I
I/O = LVTTL
I/O = HSTL
I/O = eHSTL
I/O = LVTTL
I/O = HSTL
I/O = eHSTL
OH
OH
OH
OL
OL
OL
).
= 8 mA
= 8 mA
= 8 mA
= –8 mA @V
= –8 mA @V
= –8 mA @V
(2)
DDQ
DDQ
(mA) = 0.15mA x fs
(mA) = (C
@V
@V
@V
Unit
°
mA
V
C
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
CC
DDQ
= 2.5V ± 0.125V, T
= 2.5V ± 0.125V (LVTTL)
= 2.5V ± 0.125V (LVTTL)
= 1.8V ± 0.1V (eHSTL)
= 1.5V ± 0.1V (HSTL)
= 1.8V ± 0.1V (eHSTL)
= 1.5V ± 0.1V (HSTL)
L
x V
= 2.5V for LVTTL; 1.5V for HSTL; 1.8V for eHSTL, N = Number of outputs switching.
9
DDQ
CAPACITANCE
NOTES:
1. With output deselected, (OE ≥ V
2. Characterized values, not currently tested.
3. C
Symbol
C
C
IN
OUT
x fs x N)/2000
IN
(2,3)
for Vref is 20pF.
(1,2)
V
V
Min.
REF
REF
2.375
0.68
-0.3
-0.3
-0.3
1.7
0.8
-40
A
0
0
+0.2
+0.2
= -40°C to +85°C)
Parameter
Input
Capacitance
Output
Capacitance
(1)
V
V
V
Typ.
0.75
2.5
0.9
DDQ
DDQ
DDQ
—
—
—
—
—
—
—
—
0
(T
–10
–10
Min.
—
—
—
—
—
—
—
—
—
IH
A
).
-0.4
-0.4
-0.4
= +25°C, f = 1.0MHz)
COMMERCIAL AND INDUSTRIAL
Conditions
V
V
OUT
IN
V
V
V
V
= 0V
DDQ
DDQ
= 0V
REF
REF
2.625
Max.
3.45
0.7
1.0
0.9
85
70
0
TEMPERATURE RANGES
+0.3
+0.3
-0.2
-0.2
0.4V
0.4V
0.4V
130
130
Max.
10
10
—
—
—
80
20
90
90
Unit
Max.
10
°
°
V
V
V
V
V
V
V
10
V
V
V
C
C
(3)
Unit
mA
mA
mA
mA
mA
mA
μA
μA
V
V
V
V
V
V
Unit
pF
pF