MT49H16M18CBM-25 Micron Technology Inc, MT49H16M18CBM-25 Datasheet - Page 40

• Manufacturer Part Number: MT49H16M18CBM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H16M18CBM-25

• Organization: 16Mx18
• Density: 288Mb
• Address Bus: 23b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

WRITE
Figure 18:
PDF: 09005aef815b2df8/Source: 09005aef811ba111
288Mb_RLDRAM_II_SIO_Core2.fm - Rev. O 1/11 EN
COMMAND
ADDRESS
t
t
t
CKDK (NOM)
CKDK (MIN)
CKDK (MAX)
DK#
DK#
DK#
CK#
DM
DM
DM
DK
DK
DK
CK
D
D
D
WRITE Burst
Bank a,
WRITE
Add n
T0
Notes:
1. DI an = data-in for address n; subsequent elements of burst are applied following DI an.
2. BL = 4.
NOP
T1
WL +
WL -
WL = 5
t
t
CKDK
CKDK
NOP
T2
288Mb: x18 2.5V V
T3
NOP
43
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4
NOP
EXT
, 1.8V V
an
DI
T5
NOP
an
DI
TRANSITIONING DATA
an
DI
DD
T5n
, HSTL, SIO, RLDRAM II
©2003Micron Technology, Inc. All rights reserved.
T6
NOP
T6n
Operations
T7
DON’T CARE
NOP