MT49H16M18CBM-25 Micron Technology Inc, MT49H16M18CBM-25 Datasheet - Page 59

• Manufacturer Part Number: MT49H16M18CBM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H16M18CBM-25

• Organization: 16Mx18
• Density: 288Mb
• Address Bus: 23b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 39:
PDF: 09005aef815b2df8/Source: 09005aef811ba111
288Mb_RLDRAM_II_SIO_Core2.fm - Rev. O 1/11 EN
COMMAND
ADDRESS
BANK
QVLD
QK#
DK#
CK#
DM
QK
CK
DK
Q
D
Bank a
READ
T0
Ax
READ-to-WRITE with Multiplexed Addressing
Notes:
NOP
T1
Ay
1. DO an = data-out from bank a.
2. DI bn = data-in for bank b.
3. Nominal conditions are assumed for specifications not defined.
4. BL = 4.
5. Three subsequent elements of the burst are applied following DO an.
6. Three subsequent elements of the burst which appear following DI bn are not all shown.
7. Bank address can be to any bank, but the WRITE command can only be to the same bank if
t
RC has been met.
WRITE
Bank b
T2
Ax
WL = RL + 1 = 6
RL = 5
288Mb: x18 2.5V V
NOP
Ay
T3
62
NOP
T4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T5
EXT
DO
an
, 1.8V V
T5n
NOP
T6
DD
T6n
, HSTL, SIO, RLDRAM II
TRANSITIONING DATA
©2003Micron Technology, Inc. All rights reserved.
NOP
T7
Operations
NOP
DI
bn
NOP
T8
DON’T CARE
T8n