MT49H16M18CBM-25 Micron Technology Inc, MT49H16M18CBM-25 Datasheet - Page 41

• Manufacturer Part Number: MT49H16M18CBM-25
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H16M18CBM-25

• Organization: 16Mx18
• Density: 288Mb
• Address Bus: 23b
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: uBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 779mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 19:
PDF: 09005aef815b2df8/Source: 09005aef811ba111
288Mb_RLDRAM_II_SIO_Core2.fm - Rev. O 1/11 EN
COMMAND
ADDRESS
DK#
CK#
DM
DK
CK
D
Bank a,
WRITE
Add n
Consecutive WRITE-to-WRITE
T0
Notes:
NOP
T1
1. DI an (or bn) = data-in for bank a (or bank b) and address n.
2. Three subsequent elements of the burst are applied following DI for each bank.
3. BL = 4.
4. Each WRITE command may be to any bank; if the second WRITE is to the same bank,
5. Nominal conditions are assumed for specifications not defined.
t
WL = 5
RC = 4
t
RC must be met.
Bank b,
Add n
WRITE
WL = 5
288Mb: x18 2.5V V
T3
NOP
Bank a,
WRITE
Add n
T4
44
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T5
an
DI
NOP
EXT
T5n
, 1.8V V
T6
NOP
T6n
DD
TRANSITIONING DATA
, HSTL, SIO, RLDRAM II
bn
T7
DI
NOP
©2003Micron Technology, Inc. All rights reserved.
T7n
T8
NOP
Operations
T8n
DON’T CARE
T9
an
DI
NOP