MT49H16M18CBM-25 Micron Technology Inc, MT49H16M18CBM-25 Datasheet - Page 46

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MT49H16M18CBM-25

Manufacturer Part Number
MT49H16M18CBM-25
Description
Manufacturer
Micron Technology Inc
Type
RLDRAMr
Datasheet

Specifications of MT49H16M18CBM-25

Organization
16Mx18
Density
288Mb
Address Bus
23b
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Package Type
uBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
779mA
Pin Count
144
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT49H16M18CBM-25
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
MT49H16M18CBM-25 IT:B
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
MT49H16M18CBM-25:B
Manufacturer:
MICRON
Quantity:
20 000
Figure 25:
Figure 26:
PDF: 09005aef815b2df8/Source: 09005aef811ba111
288Mb_RLDRAM_II_SIO_Core2.fm - Rev. O 1/11 EN
COMMAND
COMMAND
ADDRESS
ADDRESS
QVLD
QVLD
QK#
DK#
CK#
DM
QK#
DK#
QK
DK
CK#
CK
DM
QK
DK
CK
D
Q
Q
D
Bank a,
Add n
READ
Bank a,
T0
Add n
READ
READ-to-WRITE
READ/WRITE Interleave
T0
Notes:
Notes:
Bank b,
WRITE
Add n
Bank b,
T1
WRITE
Add n
T1
1. DO an = data-out from bank a and address n.
2. DI bn = data-in for bank b and address n.
3. Three subsequent elements of each burst follow DI bn and each DO an.
4. BL = 4.
5. Nominal conditions are assumed for specifications not defined.
1. DO xn = data-out from bank x and address n.
2. DI xn = data-in for bank x and address n.
3. Three subsequent elements of each burst follow each DI xn and DO xn.
4. BL = 4.
5. Nominal conditions are assumed for specifications not defined.
t
RC = RL = 4
t
RC = RL = 4
NOP
Bank c,
Add n
T2
READ
T2
WL = RL + 1 = 5
WL = RL + 1 = 5
288Mb: x18 2.5V V
WRITE
Bank d,
NOP
T3
Add n
T3
Bank a,
Bank a,
49
READ
Add n
Add n
READ
T4
T4
DO
an
DO
an
T4n
T4n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
Bank b,
NOP
Add n
T5
T5
EXT
, 1.8V V
T5n
T5n
Bank c,
READ
Add n
NOP
T6
T6
DI
DI
bn
bn
DO
cn
DD
T6n
T6n
, HSTL, SIO, RLDRAM II
TRANSITIONING DATA
TRANSITIONING DATA
Bank d,
WRITE
Add n
©2003Micron Technology, Inc. All rights reserved.
NOP
T7
T7
T7n
T7n
Bank a,
Add n
READ
T8
DI
dn
Operations
NOP
NOP
T8
DO
an
DO
an
DON’T CARE
DON’T CARE
T8n
T8n

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