S9S08SG16E1CTJ Freescale, S9S08SG16E1CTJ Datasheet - Page 323

• Manufacturer Part Number: S9S08SG16E1CTJ
• Manufacturer: Freescale

Specifications of S9S08SG16E1CTJ

• Cpu Family: HCS08
• Device Core Size: 8b
• Frequency (max): 40MHz
• Interface Type: SCI/SPI
• Total Internal Ram Size: 1KB
• # I/os (max): 16
• Number Of Timers - General Purpose: 1
• Operating Supply Voltage (typ): 3.3/5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 2.7V
• On-chip Adc: 12-chx10-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 20
• Package Type: TSSOP
• Program Memory Type: Flash
• Program Memory Size: 16KB
• Lead Free Status / RoHS Status: Compliant

A.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section.
Freescale Semiconductor
1
2
3
4
10
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for Flash is based upon the intrinsic bit cell performance. For additional information on how Freescale
defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
The frequency of this clock is controlled by a software setting.
#
1
2
3
4
5
6
7
8
9
—
—
—
—
—
—
—
—
C
C
C
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/f
Byte program time (random
location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T
L
L
2
to T
to T
Characteristic
H
H
4
= –40°C to +125°C
= –40°C to +150°C
2
2
1
FCLK
T = 25°C
3
Table A-16. Flash Characteristics
)
MC9S08SG32 Data Sheet, Rev. 8
2
Symbol
V
V
n
prog/era
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
FLPE
Read
prog
se
10,000
10,000
10,000
Min
150
2.7
2.7
15
5
100,000
Typical
20,000
4000
100
—
—
—
—
—
—
9
4
Appendix A Electrical Characteristics
Max
6.67
200
5.5
5.5
—
—
—
—
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
DD
♦
♦
♦
♦
♦
♦
♦
♦
♦
♦
—
Rated
Temp
supply.
♦
♦
♦
♦
♦
♦
♦
♦
♦
♦
—
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