MCIMX515DJM8C Freescale, MCIMX515DJM8C Datasheet - Page 28

• Manufacturer Part Number: MCIMX515DJM8C
• Manufacturer: Freescale

Specifications of MCIMX515DJM8C

• Operating Temperature (min): -20C
• Operating Temperature (max): 85C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Compliant

1
2
3
4
Electrical Characteristics
4.3.5
The DC Electrical Characteristics listed below are guaranteed using operating ranges per
otherwise noted.
28
Input Hysteresis
Schmitt trigger VT+
Schmitt trigger VT–
Input current (no pull-up/down)
Input current (22 kΩ Pull-up)
Input current (75 kΩ Pull-up)
Input current (100 kΩ Pull-up)
Input current (360 kΩ Pull-down)
Keeper Circuit Resistance
Low-level output voltage
High-Level DC input voltage
Low-Level DC input voltage
Input Hysteresis
Schmitt trigger VT+
Schmitt trigger VT–
I/O leakage current (no pull-up)
level through to the target DC level, VIL or VIH. Monotonic input transition time is from 0.1 ns to 1 s.
Overshoot and undershoot conditions (transitions above OVDD and below OVSS) on switching pads must be held below 0.6
V, and the duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/undershoot must
be controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or other
methods. Non-compliance to this specification may affect device reliability or cause permanent damage to the device.
Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled.
I/O leakage currents are listed in
To maintain a valid level, the transitioning edge of the input must sustain a constant slew rate (monotonic) from the current DC
Table 22. I
DC Electrical Characteristics
Parameter
I
2
C I/O DC Parameters
2
C Standard/Fast/High-Speed Mode Electrical Parameters for Low/Medium Drive Strength
See the errata for HS-I2C in i.MX51 Chip Errata document. The two
standard I
2,4
2,3
1,2
1,2
i.MX51 Applications Processors for Consumer and Industrial Products, Rev. 4
Table 21. UHVIO DC Electrical Characteristics (continued)
1
2
1
C modules have no errata.
Table
Symbol
VHYS
VT+
VT–
VIH
VIL
Vol
Iin
25.
Test Conditions
VI = OVDD or 0
Symbol
VHYS
VT+
VT–
Iol = 3 mA
Iin
Iin
Iin
Iin
Iin
—
—
—
—
—
—
NOTE
High voltage mode
Low voltage mode
Test Conditions
Vin = OVDD
Vin = OVDD
Vin = 0
Vin = 0
Vin = 0
Vin = 0
0.7 × OVDD
0.5 × OVDD
NA
—
—
0.25
Min
—
—
—
0
0.5OVDD
Typ
0.38
0.95
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.3 × OVDD
0.5 × OVDD
See Note
Typ
17
—
—
—
—
—
—
—
—
Freescale Semiconductor
OVDD
Max
0.4
—
—
0.5 × OVDD
Table
See Note
3
Max
0.43
1.33
202
5.7
61
47
—
—
13, unless
Unit
4
—
V
V
V
V
V
V
Unit
kΩ
μA
μA
μA
μA
—
V
V
V