MCIMX515DJM8C Freescale, MCIMX515DJM8C Datasheet - Page 40

• Manufacturer Part Number: MCIMX515DJM8C
• Manufacturer: Freescale

Specifications of MCIMX515DJM8C

• Operating Temperature (min): -20C
• Operating Temperature (max): 85C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Compliant

Electrical Characteristics
AC electrical characteristics in DDR2 mode for Slow mode and for ovdd=1.65 – 1.95 V, ipp_hve = 0 are
placed in
40
1
2
3
Output Pad di/dt
Input Pad Transition Times
Input Pad Propagation Delay without Hysteresis
(CMOS input), 50%-50%
Input Pad Propagation Delay with Hysteresis
(CMOS input), 50%-50%
Input Pad Propagation Delay (DDR input),
50%-50%
Maximum Input Transition Times
Output Pad Transition Times
Output Pad Propagation Delay, 50%-50%
Output Pad Slew Rate
Output Pad di/dt
Input Pad Transition Times
Input Pad Propagation Delay without Hysteresis
(CMOS input), 50%-50%
Input Pad Propagation Delay with Hysteresis
(CMOS input), 50%-50%
Input Pad Propagation Delay (DDR input),
50%-50%
Maximum Input Transition Times
Max condition for tpr, tpo, tps and didt: wcs model, 1.1 V, IO 1.65 V, 105 °C and s0-s5=111111. Typ condition for tpr, tpo,
tps and didt: typ model, 1.2 V, IO 1.8 V, 25 °C and s0-s5 = 101010. Min condition for tpr, tpo, tps and didt: bcs model, 1.3 V,
IO 1.95 V, –40 °C and s0-s5=000000.
Max condition for trfi and tpi: wcs model, 1.1 V, IO 1.65 V and 105 °C. Typ condition for trfi and tpi: typ model, 1.2 V, IO
1.8 V and 25 °C. Min condition for trfi and tpi: bcs model, 1.3 V, IO 1.95 V and –40 °C.
Hysteresis mode is recommended for input with transition time greater than 25 ns.
Table
2
2
Table 38. AC Electrical Characteristics of DDR2 IO Pads for Slow Mode and
1
Table 37. AC Electrical Characteristics of DDR2 IO Pads for Fast mode and
38:
1
i.MX51 Applications Processors for Consumer and Industrial Products, Rev. 4
Parameter
Parameter
1
2
2
2
2
2
2
1
3
3
for ovdd=1.65 – 1.95 V (ipp_hve=0) (continued)
for ovdd=1.65 – 1.95 V (ipp_hve=0)
1
Symbol
Symbol
di/dt
di/dt
trm
tpo
trm
trfi
tps
tpi
tpi
tpi
tpr
trfi
tpi
tpi
tpi
Condition
Condition
1.2 pF
1.2 pF
1.2 pF
1.2 pF
1.2 pF
1.2 pF
1.2 pF
1.2 pF
15pF
35pF
15pF
35pF
15pF
35pF
Test
Test
—
—
—
—
0.09/0.09 0.132/0.128 0.212/0.213
0.45/0.93
0.55/0.55
0.38/0.38
0.75/0.76
1.39/1.40
1.50/1.55
2.05/2.16
1.56/1.54
0.84/0.84
0.09/0.09 0.132/0.128 0.212/0.213
0.45/0.93
0.55/0.55
0.38/0.38
rise/fall
rise/fall
Min
390
Min
—
82
—
0.58/0.61
0.70/0.74
1.18/1.21
1.90/1.95
2.36/2.48
1.54/1.46
0.92/0.89
0.58/0.61
0.6/0.58
0.71/0.7
0.6/0.58
0.71/0.7
Typ
201
Typ
—
40
—
Freescale Semiconductor
1.014/1.07
1.014/1.07
1.03/0.98
1.06/1.00
1.49/1.47
3.23/3.10
3.82/3.75
0.93/0.99
0.66/0.67
1.03/0.98
rise/fall
0.9/0.88
rise/fall
0.9/0.88
Max
Max
99
19
5
5
mA/ns
mA/ns
Units
Units
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns