FDMC8200S Fairchild Semiconductor, FDMC8200S Datasheet - Page 10

• Manufacturer Part Number: FDMC8200S
• Description: MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC8200S

• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 43 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 33
• Module Configuration: Dual
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.02ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMC8200S Rev.C4
©2011 Fairchild Semiconductor Corporation
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMC8200S.
Typical Characteristics
-1
-2
7
6
5
4
3
2
1
0
0
Figure 27. FDMC8200S SyncFET body
diode reverse recovery characteristic
20
di/dt = 300 A/
40
TIME (ns)
(continued)
60
μ
s
80
100
10
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0.000001
0.00001
0.0001
0.001
0.01
Figure 28. SyncFET body diode reverses
leakage versus drain-source voltage
0
5
V
DS
10
, REVERSE VOLTAGE (V)
15
T
T
T
J
J
J
= 125
= 100
= 25
o
o
o
20
C
C
C
www.fairchildsemi.com
25
30