FDMC8200S Fairchild Semiconductor, FDMC8200S Datasheet - Page 8
![MOSFET Power 30V Dual N-Channel PowerTrench MOSFET](/photos/39/68/396865/largeimagefdm_sml.jpg)
FDMC8200S
Manufacturer Part Number
FDMC8200S
Description
MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMC8200S.pdf
(12 pages)
Specifications of FDMC8200S
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
20 mOhms
Forward Transconductance Gfs (max / Min)
43 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
18 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 33
Module Configuration
Dual
Continuous Drain Current Id
18A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.02ohm
Rds(on) Test Voltage Vgs
10V
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC8200S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDMC8200S Rev.C4
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
0.01
20
10
10
0.1
50
10
1
0.01
8
6
4
2
0
Figure 20. Gate Charge Characteristics
1
0.01
0
I
D
Figure 22. Unclamped Inductive
THIS AREA IS
LIMITED BY r
= 8.5 A
Figure 24. Forward Bias Safe
2
V
Switching Capability
V
DS
t
0.1
DD
AV
, DRAIN to SOURCE VOLTAGE (V)
4
0.1
Operating Area
, TIME IN AVALANCHE (ms)
= 10 V
Q
SINGLE PULSE
T
R
T
J
A
g
DS(on)
θ
JA
, GATE CHARGE (nC)
= MAX RATED
= 25
V
T
= 125
6
DD
J
= 125
o
= 15 V
C
1
o
C/W
8
T
o
C
J
V
= 25
DD
1
= 20 V
10
T
o
J
C
= 100
10
12
o
C
10
100 ms
10 s
DC
100 us
1 ms
10 ms
1 s
14
100200
30
16
8
T
J
= 25°C unless otherwise noted
100
3000
1000
Figure 23. Maximum Continuous Drain
Figure 25. Single Pulse Maximum Power
15
12
0.1
10
100
0.001
9
6
3
0
1
10
25
0.1
Limited by package
Figure 21. Capacitance vs Drain
Current vs Case Temperature
f = 1 MHz
V
GS
0.01
V
= 0 V
GS
50
V
to Source Voltage
= 10 V
DS
T
, DRAIN TO SOURCE VOLTAGE (V)
A
t, PULSE WIDTH (sec)
,
CASE TEMPERATURE (
Dissipation
0.1
V
GS
75
1
= 4.5 V
R
θ
1
JA
= 50
100
V
GS
o
C/W
= 10 V
10
SINGLE PULSE
R
T
A
θ
o
JA
C )
= 25
www.fairchildsemi.com
= 125
125
100
10
o
C
C
C
C
o
C/W
oss
rss
iss
1000
150
30