FDMC8200S Fairchild Semiconductor, FDMC8200S Datasheet - Page 5

• Manufacturer Part Number: FDMC8200S
• Description: MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC8200S

• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 43 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 33
• Module Configuration: Dual
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.02ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMC8200S Rev.C4
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
0.001
0.01
0.01
10
100
0.1
0.1
50
10
8
6
4
2
0
10
Figure 7.
8
7
6
5
4
3
2
1
0.01
1
0.01
1
0.01
0
I
Figure 9.
D
Figure 11. Forward Bias Safe
SINGLE PULSE
T
R
T
= 6 A
THIS AREA IS
LIMITED BY r
J
C
θ
THIS AREA IS
LIMITED BY r
JA
= MAX RATED
= 25
= 180
Switching Capability
V
V
Gate Charge Characteristics
DS
o
0.1
t
DS
C
V
AV
0.1
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
2
DD
Unclamped Inductive
, DRAIN to SOURCE VOLTAGE (V)
, TIME IN AVALANCHE (ms)
o
C/W
Q
SINGLE PULSE
T
R
T
T
= 10 V
DS(on)
J
A
g
θ
0.1
J
JA
, GATE CHARGE (nC)
= MAX RATED
= 25
DS(on)
= 100
V
= 125
DD
o
= 15 V
T
C
o
J
C
1
= 125
o
C/W
1
4
o
C
T
J
= 25
1
10
10
o
C
6
V
DD
DC
100 us
1 ms
10 ms
100 ms
1 s
10 s
1 ms
10 ms
100 ms
1 s
10 s
100 us
DC
= 20 V
100200
100200
7
8
T
J
5
= 25°C unless otherwise noted
1000
100
100
0.1
25
20
15
10
10
10
0.001
5
0
Figure 10.
1
0.1
25
Figure 12.
f = 1 MHz
V
Limited by Package
GS
Figure 8.
Current vs Case Temperature
V
= 0 V
GS
0.01
V
= 10 V
50
DS
Maximum Continuous Drain
Power Dissipation
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
t, PULSE WIDTH (sec)
c
Single Pulse Maximum
Capacitance vs Drain
,
0.1
CASE TEMPERATURE (
75
1
1
V
GS
= 4.5 V
100
10
SINGLE PULSE
R
T
A
θ
JA
= 25
V
R
GS
= 125
o
θ
C )
JC
= 10 V
o
125
C
10
100
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= 7.5
o
C/W
C
C
C
oss
rss
iss
o
C/W
1000
30
150