FDMC8200S Fairchild Semiconductor, FDMC8200S Datasheet - Page 9
![MOSFET Power 30V Dual N-Channel PowerTrench MOSFET](/photos/39/68/396865/largeimagefdm_sml.jpg)
FDMC8200S
Manufacturer Part Number
FDMC8200S
Description
MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMC8200S.pdf
(12 pages)
Specifications of FDMC8200S
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
20 mOhms
Forward Transconductance Gfs (max / Min)
43 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
18 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 33
Module Configuration
Dual
Continuous Drain Current Id
18A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.02ohm
Rds(on) Test Voltage Vgs
10V
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC8200S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDMC8200S Rev.C4
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
0.001
0.01
0.1
2
1
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 26. Junction-to-Ambient Transient Thermal Response Curve
10
-3
SINGLE PULSE
R
(
Note 1b
θ
JA
= 125
)
o
C/W
10
-2
t, RECTANGULAR PULSE DURATION (sec)
10
-1
T
J
9
= 25 °C unless otherwise noted
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJC
DM
1
/t
x R
2
100
θJC
t
1
+ T
t
2
C
www.fairchildsemi.com
1000