M29F400FB55M3F2 Micron Technology Inc, M29F400FB55M3F2 Datasheet - Page 29

• Manufacturer Part Number: M29F400FB55M3F2
• Manufacturer: Micron Technology Inc

Specifications of M29F400FB55M3F2

• Cell Type: NOR
• Density: 4Mb
• Access Time (max): 55ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 19/18Bit
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: -40C to 125C
• Package Type: SO W
• Program/erase Volt (typ): 4.5 to 5.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Automotive
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8/16Bit
• Number Of Words: 512K/256K
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 44
• Lead Free Status / Rohs Status: Compliant

4.10
4.11
The Program/Erase Controller will suspend within the Erase Suspend Latency Time (refer to
Table 6.: Program/Erase Times and Program/Erase Endurance Cycles, M29F160F
value) of the Erase Suspend Command being issued. Once the Program/Erase Controller
has stopped the memory will be set to Read mode and the Erase will be suspended. If the
Erase Suspend command is issued during the period when the memory is waiting for an
additional block (before the Program/Erase Controller starts) then the Erase is suspended
immediately and will start immediately when the Erase Resume Command is issued. It is
not possible to select any further blocks to erase after the Erase Resume.
During Erase Suspend it is possible to Read and Program cells in blocks that are not being
erased; both Read and Program operations behave as normal on these blocks. If any
attempt is made to program in a protected block or in the suspended block then the Program
command is ignored and the data remains unchanged. The Status Register is not read and
no error condition is given. Reading from blocks that are being erased will output the Status
Register.
It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands
during an Erase Suspend. The Read/Reset command must be issued to return the device to
Read Array mode before the Resume command will be accepted.
Erase Resume Command
The Erase Resume command must be used to restart the Program/Erase Controller from
Erase Suspend. An erase can be suspended and resumed more than once.
Read CFI Query Command
The Read CFI Query Command is used to read data from the Common Flash Interface
(CFI) Memory Area. This command is valid when the device is in the Read Array mode, or
when the device is in Auto Select mode.
One Bus Write cycle is required to issue the Read CFI Query Command. Once the
command is issued subsequent Bus Read operations read from the Common Flash
Interface Memory Area.
The Read/Reset command must be issued to return the device to the previous mode (the
Read Array mode or Auto Select mode). A second Read/Reset command would be needed
if the device is to be put in the Read Array mode from Auto Select mode.
See
information contained in the Common Flash Interface (CFI) memory area.
Appendix B: Common Flash Interface (CFI)
Table 31.: Query Structure
Table 32.: CFI Query Identification
Table 33.: CFI Query System Interface
Table 34.: Device Geometry
Table 35.: Primary Algorithm-Specific Extended Query Table
Table 36.: Security Code Area
Overview,
Definition,
String,
Information,
and the following tables for details on the
for
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