M29F400FB55M3F2 Micron Technology Inc, M29F400FB55M3F2 Datasheet - Page 57

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M29F400FB55M3F2

Manufacturer Part Number
M29F400FB55M3F2
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M29F400FB55M3F2

Cell Type
NOR
Density
4Mb
Access Time (max)
55ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
19/18Bit
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 125C
Package Type
SO W
Program/erase Volt (typ)
4.5 to 5.5V
Sync/async
Asynchronous
Operating Temperature Classification
Automotive
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8/16Bit
Number Of Words
512K/256K
Supply Current
20mA
Mounting
Surface Mount
Pin Count
44
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29F400FB55M3F2
Manufacturer:
ST
Quantity:
220
Part Number:
M29F400FB55M3F2
Manufacturer:
ST
0
17h
18h
19h
1Ah
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
2Ah
2Bh
x16
x16
x16
Address
Address
Address
2Eh
30h
32h
34h
4Eh
50h
52h
54h
56h
36h
38h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
x8
Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Table 33.
Table 34.
x8
x8
0000h
0000h
0000h
0000h
0015h
0014h
0013h
0012h
0002h
0000h
0000h
0000h
0045h
0055h
0000h
0000h
0003h
0000h
000Ah
0000h
0004h
0000h
0003h
0000h
Data
Data
Data
CFI Query System Interface Information
Device Geometry Definition
Alternate Vendor Command Set and Control Interface ID Code
second vendor - specified algorithm supported
Address for Alternate Algorithm extended Query table
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
V
Typical timeout per single Byte/Word program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual block erase = 2
Typical timeout for full chip erase = 2
Maximum timeout for Byte/Word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for chip erase = 2
Device Size = 2
Flash Device Interface Code description
Maximum number of Bytes in multi-Byte program or page = 2
CC
CC
PP
PP
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase voltage
Logic Supply Maximum Program/Erase voltage
n
in number of Bytes
Description
Description
Description
n
n
times typical
ms
n
n
n
ms
times typical
times typical
n
times typical
n
µs
n
µs
n
4.5 V
5.5 V
NA
NA
8 µs
NA
1 s
NA
256 µs
NA
8 s
NA
NA
NA
2 MByte
1 MByte
512 KByte
256 KByte
x8, x16
Async.
NA
Value
Value
Value
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