M29F400FB55M3F2 Micron Technology Inc, M29F400FB55M3F2 Datasheet - Page 30

no-image

M29F400FB55M3F2

Manufacturer Part Number
M29F400FB55M3F2
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M29F400FB55M3F2

Cell Type
NOR
Density
4Mb
Access Time (max)
55ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
19/18Bit
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 125C
Package Type
SO W
Program/erase Volt (typ)
4.5 to 5.5V
Sync/async
Asynchronous
Operating Temperature Classification
Automotive
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8/16Bit
Number Of Words
512K/256K
Supply Current
20mA
Mounting
Surface Mount
Pin Count
44
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29F400FB55M3F2
Manufacturer:
ST
Quantity:
220
Part Number:
M29F400FB55M3F2
Manufacturer:
ST
0
Table 4.
X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal.
Command Interface: only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A19, DQ8-DQ14 and DQ15 are Don’t
Read/Reset: After a Read/Reset command, read the memory as normal until another command is issued.
Auto Select: After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
Program, Unlock Bypass Program, Chip Erase, Block Erase: After these commands read the Status Register until the
Unlock Bypass: After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
Unlock Bypass Reset: After the Unlock Bypass Reset command read the memory as normal until another command is issued.
Erase Suspend: After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and
Erase Resume: After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the
CFI Query: Command is valid when device is ready to read array data or when device is in Auto Select mode.
30/67
Read/Reset
Auto Select
Program
Unlock Bypass
Unlock Bypass
Program
Unlock Bypass Reset
Chip Erase
Block Erase
Erase Suspend
Erase Resume
Read CFI Query
Care. DQ15A–1 is A–1 when BYTE is V
Program/Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase
Command with additional Bus Write Operations until Timeout Bit is set.
Program commands on non-erasing blocks as normal.
Program/Erase Controller completes and the memory returns to Read Mode.
Command
Commands, 16-bit mode, BYTE = V
4
1
3
3
3
2
2
6
6+ 555
1
1
1
X
555
555
555
555
X
X
555
X
X
55
Addr Addr Addr Addr Addr Addr Addr Addr Addr Addr Addr Addr
1st
F0
AA
AA
AA
AA
A0
90
AA
AA
B0
30
98
IL
or DQ15 when BYTE is V
2AA
2AA
2AA
2AA
PA
X
2AA
2AA
2nd
55
55
55
55
PD
00
55
55
IH
X
555
555
555
555
555
Bus Write Operations
3rd
IH
.
F0
90
A0
20
80
80
PA
555
555
4th
PD
AA
AA
2AA
2AA
5th
55
55
555
BA
6th
10
30

Related parts for M29F400FB55M3F2