MC68HC908LD60IFU Freescale Semiconductor, MC68HC908LD60IFU Datasheet - Page 62

• Manufacturer Part Number: MC68HC908LD60IFU
• Manufacturer: Freescale Semiconductor

Specifications of MC68HC908LD60IFU

• Cpu Family: HC08
• Device Core Size: 8b
• Frequency (max): 6MHz
• Program Memory Type: Flash
• Program Memory Size: 60KB
• Total Internal Ram Size: 1KB
• # I/os (max): 39
• Number Of Timers - General Purpose: 2
• Operating Supply Voltage (typ): 3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• On-chip Adc: 6-chx8-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: 0C to 85C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 64
• Package Type: PQFP
• Lead Free Status / Rohs Status: Compliant

FLASH Memory
4.8 FLASH Block Protection
Technical Data
62
NOTE:
This program sequence is repeated throughout the memory until all data
is programmed.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the same FLASH array that is being
programmed or erased. While these operations must be performed in
the order shown, other unrelated operations may occur between the
steps. Do not exceed t
Characteristics.
Due to the ability of the on-board charge pump to erase and program the
FLASH memory in the target application, provision is made for protecting
blocks of memory from unintentional erase or program operations due to
system malfunction. This protection is done by use of a FLASH Block
Protect Register for each array (FLBPR and FLBPR1). The block protect
register determines the range of the FLASH memory which is to be
protected. The range of the protected area starts from a location defined
by block protect register and ends at the bottom of the FLASH memory
array ($FFFF and $3FFF). When the memory is protected, the HVEN bit
cannot be set in either ERASE or PROGRAM operations.
10. Wait for time, t
11. Clear the HVEN bit.
12. After time, t
9. Clear the PGM bit.
mode again.
FLASH Memory
rcv
nvh
(min 1µs), the memory can be accessed in read
PROG
(min. 5µs).
maximum. See
22.13 FLASH Memory
MC68HC908LD60
Freescale Semiconductor
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Rev. 1.1