H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 13

• Manufacturer Part Number: H27UAG8T2ATR-BC
• Description: 58T1891
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UAG8T2ATR-BC

• Memory Type: Flash - NAND
• Memory Size: 16Gbit
• Memory Configuration: 2048M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Aug. 2010
1.10. Bad Block Replacement
This device may have the invalid blocks when shipped from factory. An invalid block is one that contains one or more
bad bits. Over the lifetime of the device additional Bad Blocks may develop. In this case, the block has to be replaced
by copying the data to a valid block. These additional Bad Blocks can be identified as attempts to program or erase
them will give errors in the Status Register.
The failure of a page program operation does not affect the data in other pages in the same block. Bad block can be
replaced by re-programming the current data and copying the rest of the replaced block to an available valid block.
Refer to Table 2 (
occurs during an operation.
Table 2. Block failure
Notes:
■ Figure 5. Block replacement
1. An error occurs on nth page of the Block A during Program or Erase operation.
2. Data in Block A is copied to same location in Block B which is valid block.
3. Nth page of block A which is in controller buffer memory is copied into nth page of Block B.
4. Bad block table should be updated to prevent from erasing or programming Block A.
block failure
Operation
Program
1 Page
Nth Page
Erase
Read
st
) and Figure 5 (
Block A
Failure
Data
FFh
Block replacement
Buffer memory
Controller
(3)
(2)
) for the recommended procedure to follow if an error
16Gb (2048M x 8bit) NAND Flash
Block B
Data
FFh
Recommended Procedure
Block Replacement
Block Replacement
1 Page
H27UAG8T2B Series
Nth Page
ECC
st
Release
13