H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 55

• Manufacturer Part Number: H27UAG8T2ATR-BC
• Description: 58T1891
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UAG8T2ATR-BC

• Memory Type: Flash - NAND
• Memory Size: 16Gbit
• Memory Configuration: 2048M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Aug. 2010
5.6. Interleaved Multi Plane Block Erase
Figure 56 shows how to perform two types of interleaved Multi Plane Block Erase operations. This operation must meet
two-plane addressing requirements.
Note:
70h command is prohibited during interleaved operations.
■ Figure 56. Interleaved multi plane block erase
I/Ox
R/B#
R/B#
R/B#
(chip 1 internal)
(external)
(chip 2 internal)
60h
Address
(3cycle)
Chip 1
60h
Address
(3cycle)
Chip 1
D0h
60h
Address
(3cycle)
Chip 2
60h
Address
(3cycle)
Chip 2
D0h
78h
16Gb (2048M x 8bit) NAND Flash
Chip 1
Add 1.
Row.
Add 2.
Row.
Add. 3
Row.
Status
H27UAG8T2B Series
60h
Address
(3cycle)
Chip 1
60h
Release
Address
(3cycle)
Chip 1
D0h
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