H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 32

58T1891

H27UAG8T2ATR-BC

Manufacturer Part Number
H27UAG8T2ATR-BC
Description
58T1891
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of H27UAG8T2ATR-BC

Memory Type
Flash - NAND
Memory Size
16Gbit
Memory Configuration
2048M X 8
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Rohs Compliant
Yes

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Rev 1.0 / Aug. 2010
3.17. Page Program Operation Timings with CE# don't care
Note:
3.18. Random Data Input Timings
Notes:
t
ADL
WE#
1.
2.
I/Ox
CE#
Figure 22. Page program operation timings with CE# don't care
CLE
ALE
Figure 24. Random data input timings
is the time from the WE# rising edge of final address cycle to the WE# rising edge of first data cycle.
t
Random data input can be performed in a page.
ADL
is the time from the WE# rising edge of final address cycle to the WE# rising edge of first data cycle.
80h
Add1
Col.
Add1
Col.
Add1
Row.
Row.
Add2
WE#
CE#
Row.
Add3
Din
N
N+1
Din
t
CS
t
WP
16Gb (2048M x 8bit) NAND Flash
t
CH
Din
M
H27UAG8T2B Series
Din
P
P+1
Din
Release
Din
R
Don’t care
10h
32

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