H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 3

• Manufacturer Part Number: H27UAG8T2ATR-BC
• Description: 58T1891
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UAG8T2ATR-BC

• Memory Type: Flash - NAND
• Memory Size: 16Gbit
• Memory Configuration: 2048M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Aug. 2010
■ Multilevel Cell technology
■ Supply Voltage
■ Organization
■ Page Read Time
■ Write Time
■ Operating Current
■ Hardware Data Protection
- 3.3V device : Vcc = 2.7 V ~ 3.6 V
- Page size : 8,640 Bytes(8,192+448 bytes)
- Block size : 256 pages(2M+112K bytes)
- Plane size : 512 blocks
- Random Access: 200 ㎲ (Max.)
- Sequential Access : 25 ㎱ (Min.)
- Page program : 1600 ㎲ (Typ.)
- Block erase : 2.5 ㎳ (Typ.)
- Read
- Program
- Erase
- Standby
- Program/Erase locked during power transitions
Vcc = 2.7 V ~ 3.6 V
1. SUMMARY DESCRIPTION
■ Endurance
■ Data Retention
■ Package
■ Unique ID for copyright protection
- 10 Years
- 3,000 P/E cycles (with 24 bit/ 1,024byte ECC)
- TSOP (12x20), 48Pin
- Wafer (Bare Die)
16Gb (2048M x 8bit) NAND Flash
H27UAG8T2B Series
Release
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