H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 31
![58T1891](/photos/40/61/406114/ge48tsop-40_sml.jpg)
H27UAG8T2ATR-BC
Manufacturer Part Number
H27UAG8T2ATR-BC
Description
58T1891
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet
1.H27UAG8T2ATR-BC.pdf
(61 pages)
Specifications of H27UAG8T2ATR-BC
Memory Type
Flash - NAND
Memory Size
16Gbit
Memory Configuration
2048M X 8
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
H27UAG8T2ATR-BC
Manufacturer:
HYNIX
Quantity:
2 526
Company:
Part Number:
H27UAG8T2ATR-BC
Manufacturer:
SIEMENS
Quantity:
390
Company:
Part Number:
H27UAG8T2ATR-BC
Manufacturer:
HYNIX
Quantity:
4 000
Part Number:
H27UAG8T2ATR-BC
Manufacturer:
HYNIX/海力士
Quantity:
20 000
Rev 1.0 / Aug. 2010
3.15. Read ID Operation Timings
3.16. Page Program Operation Timings
Note:
■ Figure 20. Read ID operation timings
■
Figure 21. Page program operation timings
t
ADL
WE#
CE#
CLE
RE#
ALE
I/Ox
is the time from the WE# rising edge of final address cycle to the WE# rising edge of first data cycle.
90h
00h
t
WHR
t
AR
Maker code
t
REA
ADh
Device
code
16Gb (2048M x 8bit) NAND Flash
3rd
cyc.
4th
cyc.
H27UAG8T2B Series
5th
cyc.
6th
cyc.
Release
31