BF998 NXP Semiconductors, BF998 Datasheet - Page 10

Depletion type Field-Effect Transistor in a plastic SOT143 package

BF998

Manufacturer Part Number
BF998
Description
Depletion type Field-Effect Transistor in a plastic SOT143 package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
1996 Aug 01
handbook, halfpage
Silicon N-channel dual-gate MOS-FETs
V
DD
ΔG tr
(dB)
Fig.19 Automatic gain control characteristics
= 12 V; f = 200 MHz; T
−10
−20
−30
−40
−50
0
0
I DSS =
max
typ
min
measured in circuit of Fig.17.
2
amb
4
= 25 C.
6
V agc (V)
8
MGE808
10
10
handbook, halfpage
V
DD
ΔG tr
(dB)
Fig.20 Automatic gain control characteristics
= 12 V; f = 800 MHz; T
−10
−20
−30
−40
−50
0
0
I DSS =
max
typ
min
measured in circuit of Fig.18.
2
amb
4
= 25 C.
BF998; BF998R
6
Product specification
V agc (V)
8
MGE807
10