BF998 NXP Semiconductors, BF998 Datasheet - Page 5

Depletion type Field-Effect Transistor in a plastic SOT143 package

BF998

Manufacturer Part Number
BF998
Description
Depletion type Field-Effect Transistor in a plastic SOT143 package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
1996 Aug 01
handbook, halfpage
handbook, halfpage
Silicon N-channel dual-gate MOS-FETs
(mA)
V
V
I D
G2-S
DS
(mA)
I D
Fig.7
= 8 V; V
24
20
16
12
Fig.5 Output characteristics; typical values.
= 4 V; T
8
4
0
24
20
16
12
−1600
0
8
4
0
G2-S
amb
Drain current as a function of gate 1
voltage; typical values.
= 4 V; T
−1200
= 25 C.
2
amb
4
−800
= 25 C.
6
−400
V DS (V)
V G1 (mV)
max
8
0
MGE813
MGE814
V G1-S =
min
typ
10
400
0.4 V
0.3 V
0.2 V
0.1 V
0 V
−0.1 V
−0.2 V
−0.3 V
−0.4 V
−0.5 V
5
handbook, halfpage
handbook, halfpage
Fig.8
V
V
DS
DS
(mA)
(mS)
|y fs |
I D
Fig.6 Transfer characteristics; typical values.
= 8 V; T
= 8 V; T
24
20
16
12
30
24
18
12
8
4
0
6
0
−1
Forward transfer admittance as a function of
drain current; typical values.
0
amb
amb
= 25 C.
= 25 C.
V G2-S = 0 V
4
8
V G2-S = 4 V
0
BF998; BF998R
12
Product specification
V G1 (V)
3 V
I D (mA)
16
2 V
0.5 V
MGE815
MGE811
0 V
1 V
20
1
4 V
3 V
2 V
1 V