BF998 NXP Semiconductors, BF998 Datasheet - Page 9

Depletion type Field-Effect Transistor in a plastic SOT143 package

BF998

Manufacturer Part Number
BF998
Description
Depletion type Field-Effect Transistor in a plastic SOT143 package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
1996 Aug 01
handbook, full pagewidth
Silicon N-channel dual-gate MOS-FETs
V
L1 = L4 = 200 nH; 11 turns 0.5 mm copper wire, without spacing, internal diameter 3 mm.
L2 = 2 cm, silvered 0.8 mm copper wire, 4 mm above ground plane.
L3 = 2 cm, silvered 0.5 mm copper wire, 4 mm above ground plane.
DD
= 12 V; G
S
50 Ω
input
= 3.3 mS; G
100 kΩ
1 nF
L
= 1 mS.
V DD
L1
140 kΩ
1 nF
C1
2 to 18 pF
L2
Fig.18 Gain control test circuit at f = 800 MHz.
1 nF
1 nF
C2
0.5 to 3.5 pF
V agc
270 kΩ
1.8 kΩ
V DD
9
360 Ω
1 nF
C3
0.5 to
3.5 pF
L3
V DD
L4
C4
4 to 40 pF
1 nF
1 nF
BF998; BF998R
Product specification
MGE801
50 Ω
output