BF998 NXP Semiconductors, BF998 Datasheet - Page 7

Depletion type Field-Effect Transistor in a plastic SOT143 package

BF998

Manufacturer Part Number
BF998
Description
Depletion type Field-Effect Transistor in a plastic SOT143 package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
1996 Aug 01
Silicon N-channel dual-gate MOS-FETs
Fig.15 Forward transfer admittance and phase as a
V
(mS)
V
y fs
DS
DS
10
10
(mS)
Fig.13 Input admittance as a function of the
y is
1
= 8 V; V
= 8 V; V
10
10
2
10
10
1
1
2
10
function of frequency; typical values.
G2-S
G2-S
frequency; typical values.
= 4 V; I
= 4 V; I
D
D
= 10 mA; T
= 10 mA; T
10
2
10
y fs
ϕ
amb
amb
2
fs
b is
g is
= 25 C.
= 25 C.
f (MHz)
f (MHz)
MGC468
MGC466
10
3
10
10
10
1
(deg)
ϕ
3
2
fs
7
Fig.14 Reverse transfer admittance and phase as a
V
V
(μS)
y rs
DS
DS
10
10
Fig.16 Output admittance as a function of the
10
(mS)
1
= 8 V; V
y os
= 8 V; V
10
10
3
2
10
10
1
1
2
10
function of frequency; typical values.
G2-S
G2-S
frequency; typical values.
= 4 V; I
= 4 V; I
D
D
= 10 mA; T
= 10 mA; T
10
2
ϕ
y rs
10
BF998; BF998R
rs
amb
amb
2
= 25 C.
= 25 C.
f (MHz)
Product specification
f (MHz)
b os
g os
MGC467
MGC469
10
3
10
10
10
10
1
(deg)
ϕ
3
3
2
rs