BF998 NXP Semiconductors, BF998 Datasheet - Page 6

Depletion type Field-Effect Transistor in a plastic SOT143 package

BF998

Manufacturer Part Number
BF998
Description
Depletion type Field-Effect Transistor in a plastic SOT143 package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
1996 Aug 01
handbook, halfpage
handbook, halfpage
Silicon N-channel dual-gate MOS-FETs
Fig.9
V
V
Fig.11 Gate 1 input capacitance as a function of
DS
DS
(mS)
|y fs |
= 8 V; T
(pF)
= 8 V; V
C is
2.3
2.1
1.9
1.7
1.5
1.3
30
24
18
12
6
0
−2.4
−1
Forward transfer admittance as a function of
gate 1 voltage; typical values.
gate 1-source voltage; typical values.
amb
G2-S
= 25 C.
= 4 V; f = 1 MHz; T
−1.6
−0.8
0
amb
= 25 C.
V G1 (V)
V G2-S = 4 V
0
V G1-S (V)
MGE812
MGE809
3 V
2 V
1 V
0 V
0.8
1
6
handbook, halfpage
handbook, halfpage
V
V
Fig.12 Gate 1 input capacitance as a function of
G2-S
DS
C os
(pF)
(pF)
Fig.10 Output capacitance as a function of
= 8 V; V
C is
= 4 V; f = 1 MHz; T
2.4
2.3
2.2
2.1
2.0
1.5
1.4
1.3
1.2
1.1
1.0
4
6
gate 2-source voltage; typical values.
G1-S
drain-source voltage; typical values.
= 0 V; f = 1 MHz; T
6
4
amb
= 25 C.
8
2
amb
BF998; BF998R
10
= 25 C.
Product specification
V DS (V)
0
V G2−S (V)
12
12 mA
10 mA
8 mA
MBH479
MGE810
−2
14