BF998 NXP Semiconductors, BF998 Datasheet - Page 8

Depletion type Field-Effect Transistor in a plastic SOT143 package

BF998

Manufacturer Part Number
BF998
Description
Depletion type Field-Effect Transistor in a plastic SOT143 package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
1996 Aug 01
handbook, full pagewidth
Silicon N-channel dual-gate MOS-FETs
V
L1 = 45 nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm.
L2 = 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm.
Tapped at approximately half a turn from the cold side, to adjust G
DD
= 12 V; G
S
= 2 mS; G
50 Ω
input
V DD
L
= 0.5 mS.
5.5 pF
140 kΩ
C1
L1
1 nF
100 kΩ
Fig.17 Gain control test circuit at f = 200 MHz.
1 nF
1 nF
V agc
47 kΩ
15 pF
D1
BB405
L
= 0.5 mS. C1 adjusted for G
input
V tun
330 kΩ
8
1 nF
1.8 kΩ
360 Ω
1 nF
S
1 nF
1 nF
= 2 mS.
L2
V DD
20 μH
10 pF
47 μF
D2
BB405
1 nF
output
V tun
BF998; BF998R
330 kΩ
1 nF
50 Ω
output
MGE802
Product specification