BF998 NXP Semiconductors, BF998 Datasheet - Page 2

Depletion type Field-Effect Transistor in a plastic SOT143 package

BF998

Manufacturer Part Number
BF998
Description
Depletion type Field-Effect Transistor in a plastic SOT143 package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
FEATURES
 Short channel transistor with high forward transfer
 Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
 VHF and UHF applications with 12 V supply voltage,
DESCRIPTION
Depletion type field effect transistor in a plastic
microminiature SOT143B or SOT143R package with
source and substrate interconnected. The transistors are
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
PINNING
QUICK REFERENCE DATA
1996 Aug 01
V
I
P
y
C
C
F
T
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
SYMBOL
D
admittance to input capacitance ratio
such as television tuners and professional
communications equipment.
j
DS
tot
Silicon N-channel dual-gate MOS-FETs
ig1-s
rs
fs
PIN
1
2
3
4
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
operating junction temperature
SYMBOL
s, b
g
g
d
2
1
CAUTION
source
drain
gate 2
gate 1
PARAMETER
DESCRIPTION
f = 1 MHz
f = 800 MHz
2
handbook, halfpage
CONDITIONS
handbook, halfpage
Marking code: MOp.
Marking code: MOp.
Top view
Top view
Fig.2
Fig.1
4
3
2
1
Simplified outline (SOT143R)
and symbol; BF998R.
Simplified outline (SOT143B)
and symbol; BF998.
1
3
2
4
24
2.1
25
1
TYP.
BF998; BF998R
MAM039
MAM040
Product specification
12
30
200
150
g
g 1
MAX.
g 2
g 1
2
V
mA
mW
mS
pF
fF
dB
C
UNIT
s,b
d
s,b
d