BF998 NXP Semiconductors, BF998 Datasheet - Page 4

Depletion type Field-Effect Transistor in a plastic SOT143 package

BF998

Manufacturer Part Number
BF998
Description
Depletion type Field-Effect Transistor in a plastic SOT143 package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a ceramic substrate, 8 mm  10 mm  0.7 mm.
2. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
T
Note
1. Measured under pulse condition.
DYNAMIC CHARACTERISTICS
Common source; T
1996 Aug 01
R
R
V
V
V
V
I
I
I
y
C
C
C
C
F
j
DSS
SYMBOL
SYMBOL
SYMBOL
= 25 C; unless otherwise specified.
Silicon N-channel dual-gate MOS-FETs
th j-a
th j-a
ig1-s
ig2-s
os
rs
G1-SS
G2-SS
fs
(BR)G1-SS
(BR)G2-SS
(P)G1-S
(P)G2-S
thermal resistance from junction to ambient in free air; BF998
thermal resistance from junction to ambient in free air; BF998R note 1
gate 1-source breakdown voltage
gate 2-source breakdown voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance
noise figure
amb
PARAMETER
= 25 C; V
PARAMETER
DS
= 8 V; V
PARAMETER
G2-S
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
f = 800 MHz; G
= 4 V; I
V
V
V
V
V
V
V
G2-S
G1-S
G2-S
G1-S
G2-S
G2-S
G1-S
D
= 10 mA.
4
= V
= V
= 4 V; V
= 0; V
= 4 V; V
= V
= V
CONDITIONS
S
S
DS
DS
DS
DS
= 2 mS; B
= 3.3 mS; B
DS
= 0; I
= 0; I
= 0; V
= 0; V
CONDITIONS
DS
DS
= 8 V; I
= 8 V; I
= 8 V; V
G1-SS
G2-SS
G1-S
G2-S
S
D
= B
S
= 5 V
= 5 V
= 10 mA
= 10 mA
= 20 A
D
= B
G1-S
note 1
note 2
= 20 A
Sopt
CONDITIONS
Sopt
= 0; note 1
21
MIN.
BF998; BF998R
6
6
2
24
2.1
1.2
1.05
25
0.6
1.0
MIN.
TYP.
VALUE
Product specification
460
500
500
20
20
2.0
1.5
18
50
50
2.5
MAX.
MAX.
UNIT
K/W
K/W
K/W
V
V
V
V
mA
nA
nA
mS
pF
pF
pF
fF
dB
dB
UNIT
UNIT