T660N Infineon Technologies, T660N Datasheet - Page 6

• Manufacturer Part Number: T660N
• Manufacturer: Infineon Technologies

Specifications of T660N

• Vdrm/ Vrrm (v): 2,200.0 - 2,600.0 V
• Itsm: 11,500.0 A
• Itavm: 659 (180 ° el sin)
• Housing: Disc dia 58mm height 26mm / Ceramic
• Configuration: Phase Control Thyristors / SCR

IFBIP D AEC / 2009-03-04, H.Sandmann
N
Phase Control Thyristor
140
120
100
2500
2000
1500
1000
Netz-Thyristor
80
60
40
20
500
0
0
0
Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature T
0°
200
200
Durchlassverlustleistung / On-state power loss P
Parameter: Stromflusswinkel Θ / Current conduction angle Θ
Parameter: Stromflusswinkel Θ / Current conduction angle Θ
0
Datenblatt / Data sheet
θ = 30°
Sinusförmiger Strom / Sinusoidal current
Sinusförmiger Strom / Sinusoidal current
Beidseitige Kühlung / Two-sided cooling
180°
Durchlassverluste
400
θ = 30°
400
T660N
A 04/09
60°
60°
I
I
TAV
600
TAV
600
[A]
[A]
90°
90°
120°
800
TAV
800
120°
= f(I
0°
TAV
)
180°
C
1000
180°
= f(I
1000
Seite/page
TAV
0
)
180°
1200
1200
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